Invention Grant
- Patent Title: Method of forming silicon on a substrate
- Patent Title (中): 在基板上形成硅的方法
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Application No.: US14787221Application Date: 2014-04-28
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Publication No.: US09595437B2Publication Date: 2017-03-14
- Inventor: Ryoichi Ishihara , Miki Trifunovic , Michiel Van Der Zwan
- Applicant: Technische Universiteit Delft
- Applicant Address: NL Delft
- Assignee: Technische Universiteit Delft
- Current Assignee: Technische Universiteit Delft
- Current Assignee Address: NL Delft
- Agency: St. Onge Steward Johnston and Reens, LLC
- Priority: NL2010713 20130426
- International Application: PCT/NL2014/050275 WO 20140428
- International Announcement: WO2014/175740 WO 20141030
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B7/00 ; C30B29/06 ; C30B7/14 ; H01L31/18 ; H01L31/20
Abstract:
A method for forming a silicon layer using a liquid silane compound is described. The method includes the steps of: forming a first layer on a substrate, preferably a flexible substrate, the first layer having a (poly)silane; and, irradiating with light having one or more wavelength within the range between 200 and 400 nm for transforming the polysilane in silicon, preferably amorphous silicon or polysilicon.
Public/Granted literature
- US20160118252A1 Method Of Forming Silicon On A Substrate Public/Granted day:2016-04-28
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