Invention Grant
- Patent Title: Method of forming semiconductor structure with anti-punch through structure
- Patent Title (中): 用抗冲孔结构形成半导体结构的方法
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Application No.: US15046046Application Date: 2016-02-17
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Publication No.: US09595442B2Publication Date: 2017-03-14
- Inventor: Tsung-Yao Wen , Jui-Yao Lai , Yao-De Chiou , Sai-Hooi Yeong , Yen-Ming Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/08 ; H01L21/265 ; H01L21/8238 ; H01L21/8234 ; H01L29/66 ; H01L21/84 ; H01L27/092 ; H01L27/12 ; H01L29/10 ; H01L21/324 ; H01L29/04 ; H01L29/06 ; H01L29/161 ; H01L27/088
Abstract:
A method for manufacturing a semiconductor structure is provided. The method includes implanting a first type of dopants in a first region and a second region of a substrate and implanting a second type of dopants in the second region of the substrate. The method includes forming a material layer over the first region and the second region of the substrate and patterning the material layer, the first region of the substrate, and the second region of the substrate to form a first fin structure and a second fin structure The method includes forming a gate structure across the first fin structure and the second fin structure.
Public/Granted literature
- US20160218007A1 METHOD OF FORMING SEMICONDUCTOR STRUCTURE WITH ANTI-PUNCH THROUGH STRUCTURE Public/Granted day:2016-07-28
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