Residue free oxide etch

Invention Grant

US09595452B2 Residue free oxide etch 有权

Title translation: 无残留氧化物蚀刻

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Patent Title: Residue free oxide etch
Patent Title (中): 无残留氧化物蚀刻
Application No.: US14723348

Application Date: 2015-05-27
Publication No.: US09595452B2

Publication Date: 2017-03-14
Inventor: Chih-Hsun Hsu , Meihua Shen , Thorsten Lill
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Beyer Law Group LLP
Main IPC: H01L21/465
IPC: H01L21/465

Abstract:

A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

Abstract(Chinese):

提供了选择性地蚀刻氧化硅的方法。提供了表面反应相，其包括使包含氢，含氮和氟的组分的表面反应气体流动以形成氧化硅到包含硅，氢，氮和氟的化合物中，将表面反应气体形成等离子体，并停止流动的表面反应气体。将表面进行湿处理以除去化合物。

Public/Granted literature

US20160351418A1 RESIDUE FREE OXIDE ETCH Public/Granted day:2016-12-01

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/465	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/469）