Invention Grant
- Patent Title: Substrate processing apparatus, recording medium and method of manufacturing semiconductor device
- Patent Title (中): 基板处理装置,记录介质及半导体装置的制造方法
-
Application No.: US14781074Application Date: 2014-03-26
-
Publication No.: US09595460B2Publication Date: 2017-03-14
- Inventor: Tsukasa Iida
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2013-082121 20130410
- International Application: PCT/JP2014/058578 WO 20140326
- International Announcement: WO2014/168006 WO 20141016
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67 ; G05B19/418 ; C23C16/455 ; C23C14/54 ; H01L21/477 ; H01L21/683

Abstract:
A substrate processing apparatus includes first and second process chambers; a mounting section on which a housing vessel that houses the substrate is mounted; a vacuum transfer chamber that has a vacuum transfer machine to transfer the substrate under a negative pressure; and an atmospheric transfer chamber that has an atmospheric transfer machine that transfers the substrate under an atmospheric pressure. Timing for the atmospheric transfer chamber to take out the substrate from the housing vessel is based on a recipe remaining time, which is a remaining time of substrate processing, and an approach time, which is a time from when the substrate is taken out from the housing vessel till when the substrate is mounted to the vacuum transfer machine.
Public/Granted literature
- US20160307783A1 SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-10-20
Information query
IPC分类: