Invention Grant
- Patent Title: Conductive element structure and method
- Patent Title (中): 导电元件结构及方法
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Application No.: US15243572Application Date: 2016-08-22
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Publication No.: US09595471B2Publication Date: 2017-03-14
- Inventor: Tai-I Yang , Hsiang-Wei Liu , Chia-Tien Wu , Hsiang-Huan Lee , Tien-Lu Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L21/3213 ; H01L21/3105

Abstract:
Conductive element structures and methods of manufacture thereof are disclosed. In some embodiments, a method of forming a conductive element in an insulating layer includes: forming a recess in a metal layer disposed over the insulating layer; selectively forming a metal liner on a sidewall of the recess; and etching a via in the insulating layer using the metal layer and the metal liner as a mask.
Public/Granted literature
- US20160358817A1 Conductive Element Structure and Method Public/Granted day:2016-12-08
Information query
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