Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US15010988Application Date: 2016-01-29
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Publication No.: US09595488B2Publication Date: 2017-03-14
- Inventor: Yoshihiro Tanaka
- Applicant: J-DEVICES CORPORATION
- Applicant Address: JP Oita
- Assignee: J-Devices Corporation
- Current Assignee: J-Devices Corporation
- Current Assignee Address: JP Oita
- Agency: Typha IP LLC
- Priority: JP2015-016500 20150130
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/40 ; H01L23/48 ; H01L23/495 ; H01L23/498 ; H01L23/00 ; H01L25/00
Abstract:
A semiconductor device according to one embodiment of the present invention includes a semiconductor element, an island having a surface on which the semiconductor element is fixed using a first metal, and a first pattern formed by a second metal, the first pattern being arranged on one part of the surface, wherein the second metal has a greater wetting characteristic than the surface when the first metal is melted.
Public/Granted literature
- US20160225701A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-08-04
Information query
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