Invention Grant
US09595494B2 Semiconductor package with high density die to die connection and method of making the same
有权
具有高密度芯片的半导体封装与管芯连接及其制造方法
- Patent Title: Semiconductor package with high density die to die connection and method of making the same
- Patent Title (中): 具有高密度芯片的半导体封装与管芯连接及其制造方法
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Application No.: US14844185Application Date: 2015-09-03
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Publication No.: US09595494B2Publication Date: 2017-03-14
- Inventor: Hong Bok We , Dong Wook Kim , Jae Sik Lee
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L25/065 ; H01L25/10 ; H01L25/00 ; H01L21/56 ; H01L21/683 ; H01L21/768 ; H01L23/31
Abstract:
A semiconductor package according to some examples of the disclosure may include a substrate having a bridge embedded in the substrate, a first and second die coupled to the substrate, and a plurality of electrically conductive bridge interconnects in the substrate coupling the bridge to the first and second die. The plurality of electrically conductive bridge interconnects may have a first bridge contact layer directly coupled to the bridge, a first solder layer on the first bridge contact layer, a second bridge contact layer on the first solder layer, a second solder layer on the second bridge contact layer, and a die contact directly coupled to one of the first and second die where the plurality of electrically conductive bridge interconnects are embedded in the substrate.
Public/Granted literature
- US20160329284A1 SEMICONDUCTOR PACKAGE WITH HIGH DENSITY DIE TO DIE CONNECTION AND METHOD OF MAKING THE SAME Public/Granted day:2016-11-10
Information query
IPC分类:
