Invention Grant
US09595499B2 Semiconductor devices having through electrodes, methods of manufacturing the same, and semiconductor packages including the same
有权
具有通孔电极的半导体器件及其制造方法以及包括该电极的半导体封装件
- Patent Title: Semiconductor devices having through electrodes, methods of manufacturing the same, and semiconductor packages including the same
- Patent Title (中): 具有通孔电极的半导体器件及其制造方法以及包括该电极的半导体封装件
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Application No.: US14850875Application Date: 2015-09-10
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Publication No.: US09595499B2Publication Date: 2017-03-14
- Inventor: Wan Choon Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon
- Priority: KR10-2014-0036525 20140328
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L27/118 ; H01L23/29 ; H01L23/31 ; H01L23/48 ; H01L21/768 ; H01L21/683
Abstract:
A semiconductor device includes a semiconductor layer having a first surface and a second surface, a through electrode penetrating the semiconductor layer and having a protruding portion that protrudes over the second surface of the semiconductor layer, a front-side bump disposed on the first surface of the semiconductor layer and electrically coupled to the through electrode, a passivation pattern including a first insulation pattern that surrounds a sidewall of the protruding portion of the through electrode and extends onto the second surface of the semiconductor layer and a second insulation pattern that covers the first insulation pattern and has an etch selectivity with respect to the first insulation pattern, and a back-side bump covering an end surface of the protruding portion of the through electrode and extending onto the passivation pattern.
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Information query
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