Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14898531Application Date: 2014-06-16
-
Publication No.: US09595500B2Publication Date: 2017-03-14
- Inventor: Kenji Kouno
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2013-139932 20130703
- International Application: PCT/JP2014/003182 WO 20140616
- International Announcement: WO2015/001727 WO 20150108
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495 ; H01L23/433

Abstract:
A semiconductor device includes: a semiconductor chip having a switching element and multiple pads electrically connected to the switching element; and multiple lead terminals electrically connected to the respective pads. The multiple lead terminals include a control terminal used for control of on/off operation of the switching element, and a main terminal into which a main current flows when the switching element is in an on state. A coupling coefficient k falls within a range of −3%≦k≦2%, where the coupling coefficient k is defined by a parasitic inductance Lg in a current path of a control current flowing in the control terminal, a parasitic inductance Lo in a current path of the main current, and a mutual inductance Ms of the parasitic inductances Lg and Lo.
Public/Granted literature
- US20160133597A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-12
Information query
IPC分类: