Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14839676Application Date: 2015-08-28
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Publication No.: US09595507B2Publication Date: 2017-03-14
- Inventor: Yoichiro Kurita
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2015-048491 20150311
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L25/00 ; H01L23/498 ; H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L25/18

Abstract:
According to one embodiment, a semiconductor device includes a laminate including a plurality of semiconductor chips and having a first width, at least part of the semiconductor chips including an electrode extending through the semiconductor chip, the semiconductor chips being stacked and connected to each other via the electrode; a silicon substrate provided on a first surface of the laminate and having a second width larger than the first width; a wiring layer provided on a second surface of the laminate; and a resin provided around the laminate.
Public/Granted literature
- US20160268232A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-09-15
Information query
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