Invention Grant
- Patent Title: Semiconductor devices and arrangements including dummy gates for electrostatic discharge protection
- Patent Title (中): 半导体器件和布置包括用于静电放电保护的虚拟栅极
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Application No.: US15138245Application Date: 2016-04-26
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Publication No.: US09595516B2Publication Date: 2017-03-14
- Inventor: Mayank Shrivastava , Christian Russ
- Applicant: Intel IP Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL IP CORPORATION
- Current Assignee: INTEL IP CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/02 ; H01L27/092
Abstract:
A semiconductor device and device arrangement including a plurality of semiconductor regions of different conductivity types and a plurality of gates which form electrically conducting paths between the semiconductor regions. The semiconductor device and device arrangement may be configured to protect against electrostatic discharge.
Public/Granted literature
- US20160240525A1 SEMICONDUCTOR DEVICES AND ARRANGEMENTS FOR ELECTROSTATIC DISCHARGE PROTECTION Public/Granted day:2016-08-18
Information query
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