Invention Grant
- Patent Title: Coaxial carbon nanotube capacitor for eDRAM
- Patent Title (中): eDRAM同轴碳纳米管电容器
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Application No.: US15132495Application Date: 2016-04-19
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Publication No.: US09595527B2Publication Date: 2017-03-14
- Inventor: Reinaldo A. Vega
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Steven J. Meyers
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/108 ; H01L49/02 ; H01L21/285 ; H01L21/762 ; H01L21/84
Abstract:
A deep trench (DT) opening is provided in a semiconductor substrate and then conducting carbon nanotubes are formed within the DT. Each conducting carbon nanotube is coated with a high k dielectric material and thereafter the remaining volume of the DT is filled with a conductive material.
Public/Granted literature
- US20160233219A1 COAXIAL CARBON NANOTUBE CAPACITOR FOR eDRAM Public/Granted day:2016-08-11
Information query
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