Invention Grant
US09595529B2 Fuse cell circuit, fuse cell array and memory device including the same
有权
保险丝盒电路,保险丝盒阵列和包含相同的存储器件
- Patent Title: Fuse cell circuit, fuse cell array and memory device including the same
- Patent Title (中): 保险丝盒电路,保险丝盒阵列和包含相同的存储器件
-
Application No.: US14713758Application Date: 2015-05-15
-
Publication No.: US09595529B2Publication Date: 2017-03-14
- Inventor: Kang-Seol Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0184202 20141219
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C17/16 ; H01L27/112 ; H01L23/525 ; G11C29/00

Abstract:
A fuse cell circuit may include a bit line, a first fuse transistor having first and second program states, a first select transistor coupled between one terminal of the first fuse transistor and the bit line, and suitable for turning on when the first fuse transistor is selected, a second fuse transistor including one terminal coupled to the other terminal of the first fuse transistor, and having first and second program states, and a second select transistor coupled between a other terminal of the second fuse transistor and the bit line, and suitable for turning on when the second fuse transistor is selected.
Public/Granted literature
- US20160181260A1 FUSE CELL CIRCUIT, FUSE CELL ARRAY AND MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2016-06-23
Information query