A semiconductor device (100) includes: a first line (8) having a first end portion (8T); a second line (2) being insulated from the first line and having a second end portion (2T); a first electrically-conductive portion (9) provided in the neighborhood of the first and second end portions so as to be spaced apart therefrom; a dielectric layer (20) covering them; and a second electrically-conductive portion (38) on the dielectric layer. The dielectric layer (20) has a first contact hole (CH1) overlapping the first end portion and a second contact hole (CH2) overlapping the first electrically-conductive portion; the second electrically-conductive portion (38) is connected with the first end portion (8T) and the first electrically-conductive portion (9) within the first contact hole (CH1) and the second contact hole (CH2); the second end portion (2T) is insulated from the first electrically-conductive portion (9); the first electrically-conductive portion (9) includes a proximate portion (9T) protruding toward the first end portion; and the dielectric layer (20) has a first hole (H1) overlapping the proximate portion (9T) of the first electrically-conductive portion.