Invention Grant
US09595580B2 Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element
有权
具有面内金属硫族化物基异质结的二维（2D）材料元件和包括所述元件的器件
- Patent Title: Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices including said element
- Patent Title (中): 具有面内金属硫族化物基异质结的二维（2D）材料元件和包括所述元件的器件
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Application No.: US14508378Application Date: 2014-10-07
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Publication No.: US09595580B2Publication Date: 2017-03-14
- Inventor: Hyeonjin Shin , Seongjun Park , Jaeho Lee , Jinseong Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0133830 20131105
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/032 ; H01L29/73 ; H01L29/778 ; H01L29/10 ; H01L29/22 ; H01L29/221 ; C01B19/04 ; C01G25/00 ; C01G27/00 ; C01G39/06 ; C01G41/00 ; H01L29/24 ; H01L29/66 ; H01L29/74 ; H01L29/78 ; H01L29/792 ; H01L31/109 ; H01L29/861 ; H01L29/737 ; H01L31/0352
Abstract:
According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.
Public/Granted literature
- US20150122315A1 TWO-DIMENSIONAL MATERIALS, METHODS OF FORMING THE SAME, AND DEVICES INCLUDING TWO-DIMENSIONAL MATERIALS Public/Granted day:2015-05-07
Information query
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