Invention Grant
- Patent Title: Compound semiconductor device and method for manufacturing the same
- Patent Title (中): 复合半导体器件及其制造方法
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Application No.: US13868429Application Date: 2013-04-23
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Publication No.: US09595594B2Publication Date: 2017-03-14
- Inventor: Lei Zhu
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2012-137281 20120618
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/778 ; H02M3/335 ; H03F3/193 ; H03F1/32 ; H03F3/195 ; H03F3/24 ; H01L29/423 ; H01L29/10 ; H01L29/20
Abstract:
A compound semiconductor device includes: a compound semiconductor region having a surface in which a step is formed; a first electrode formed so as to overlie the upper surface of the step, the upper surface being a non-polar face; and a second electrode formed along a side surface of the step so as to be spaced apart from the first electrode in a vertical direction, the side surface being a polar face.
Public/Granted literature
- US20130337619A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-12-19
Information query
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