Invention Grant
US09595595B2 Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs
有权
用FET形成具有突然结的场效应晶体管（FET）和集成电路芯片的方法
- Patent Title: Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs
- Patent Title (中): 用FET形成具有突然结的场效应晶体管（FET）和集成电路芯片的方法
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Application No.: US14750120Application Date: 2015-06-25
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Publication No.: US09595595B2Publication Date: 2017-03-14
- Inventor: Kangguo Cheng , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Law Office of Charles W. Peterson, Jr.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L27/088 ; H01L29/06 ; H01L21/225 ; H01L21/321 ; H01L21/3213 ; H01L29/49 ; H01L21/283
Abstract:
A method of forming field effect transistors (FETs) and on Integrated Circuit (IC) chips with the FETs. Channel placeholders at FET locations are undercut at each end of FET channels. Source/drain regions adjacent to each channel placeholder extend into and fill the undercut. The channel placeholder is opened to expose channel surface under each channel placeholder. Source/drain extensions are formed under each channel placeholder, adjacent to each source/drain region. After removing the channel placeholders metal gates are formed over each said FET channel.
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