Invention Grant
- Patent Title: Vertical III-nitride thin-film power diode
- Patent Title (中): 垂直III族氮化物薄膜功率二极管
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Application No.: US14957012Application Date: 2015-12-02
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Publication No.: US09595616B1Publication Date: 2017-03-14
- Inventor: Jonathan Wierer, Jr. , Arthur J. Fischer , Andrew A. Allerman
- Applicant: Sandia Corporation
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Kevin W. Bieg
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L29/66 ; H01L29/861 ; H01L29/20 ; H01L29/06 ; H01L21/02
Abstract:
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Information query
IPC分类:
