Invention Grant
- Patent Title: Strain engineered bandgaps
- Patent Title (中): 应变工程带隙
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Application No.: US13941215Application Date: 2013-07-12
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Publication No.: US09595624B2Publication Date: 2017-03-14
- Inventor: Ju Li , Xiaofeng Qian , Ji Feng
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge CN Beijing
- Assignee: Massachussets Institute of Technology,Peking University
- Current Assignee: Massachussets Institute of Technology,Peking University
- Current Assignee Address: US MA Cambridge CN Beijing
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/0352 ; H01L33/24 ; H01L31/18 ; H01L33/00 ; H05B33/08 ; H01L31/101 ; H01L33/26

Abstract:
An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first optoelectronic material that is inhomogeneously strained. A first charge carrier collector and a second charge carrier collector are each in electrical communication with the first optoelectronic material and are adapted to collect charge carriers from the first optoelectronic material. In another embodiment, a method of photocatalyzing a reaction includes using a strained optoelectronic material.
Public/Granted literature
- US20140017839A1 STRAIN-ENGINEERED BANDGAPS Public/Granted day:2014-01-16
Information query
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