Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14238159Application Date: 2011-09-07
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Publication No.: US09595655B2Publication Date: 2017-03-14
- Inventor: Yoshihito Mizuno
- Applicant: Yoshihito Mizuno
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- International Application: PCT/JP2011/070384 WO 20110907
- International Announcement: WO2013/035173 WO 20130314
- Main IPC: H01L31/058
- IPC: H01L31/058 ; H01L35/34 ; G01K7/02 ; H01L35/20 ; H01L35/32 ; H01L35/28 ; G01K7/01
Abstract:
A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.
Public/Granted literature
- US20140197514A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-07-17
Information query
