Invention Grant
- Patent Title: Memory elements using self-aligned phase change material layers and methods of manufacturing same
- Patent Title (中): 使用自对准相变材料层的存储元件及其制造方法
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Application No.: US14881630Application Date: 2015-10-13
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Publication No.: US09595672B2Publication Date: 2017-03-14
- Inventor: Jun Liu
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.
Public/Granted literature
- US20160035977A1 MEMORY ELEMENTS USING SELF-ALIGNED PHASE CHANGE MATERIAL LAYERS AND METHODS OF MANUFACTURING SAME Public/Granted day:2016-02-04
Information query
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