A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.