Invention Grant
US09595928B2 Bias circuits and methods for depletion mode semiconductor devices
有权
用于耗尽型半导体器件的偏置电路和方法
- Patent Title: Bias circuits and methods for depletion mode semiconductor devices
- Patent Title (中): 用于耗尽型半导体器件的偏置电路和方法
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Application No.: US14812715Application Date: 2015-07-29
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Publication No.: US09595928B2Publication Date: 2017-03-14
- Inventor: Bruce C. Schmukler
- Applicant: CREE, INC.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/193 ; H03F1/02 ; H03F3/21 ; H03F3/45
Abstract:
A Radio Frequency (RF) amplifier includes a depletion mode semiconductor device having a gate, a bias device and an inverting circuit. The depletion mode semiconductor device may be a HEMT and/or a MESFET. The bias device is configured to generate a bias voltage. The inverting circuit is configured to generate an inverted bias voltage from the bias voltage, and to apply the inverted bias voltage to the gate. Related circuits and methods are described.
Public/Granted literature
- US20170033749A1 BIAS CIRCUITS AND METHODS FOR DEPLETION MODE SEMICONDUCTOR DEVICES Public/Granted day:2017-02-02
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