Invention Grant
- Patent Title: Semiconductor device having a double-gate switching element
- Patent Title (中): 具有双栅极开关元件的半导体器件
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Application No.: US15163778Application Date: 2016-05-25
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Publication No.: US09595948B2Publication Date: 2017-03-14
- Inventor: Hironori Akiyama
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Priority: JP2015-143539 20150720
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/04 ; H03K17/28

Abstract:
A semiconductor device has a drive unit outputting a first drive signal to a first electrode and a second drive signal to a second electrode, an instruction signal generation unit generating an instruction signal as a basis of the drive signals and a control unit outputting a first control signal as a basis of the first drive signal and a second control signal as a basis of the second drive signal, based on the instruction signal to control the drive unit. The control unit synchronizes the first control signal with the instruction signal, delays a turning-on timing of the second control signal by a predetermined time relative to the instruction signal and determines a turning-off timing of the second control signal based on a previous pulse width of the instruction signal.
Public/Granted literature
- US20170026034A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-01-26
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