Invention Grant
- Patent Title: Selective nitride slurries with improved stability and improved polishing characteristics
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Application No.: US14849066Application Date: 2015-09-09
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Publication No.: US09597768B1Publication Date: 2017-03-21
- Inventor: Prativa Pandey , Juyeon Chang , Brian Reiss
- Applicant: Cabot Microelectronics Corporation
- Applicant Address: US IL Aurora
- Assignee: Cabot Microelectronics Corporation
- Current Assignee: Cabot Microelectronics Corporation
- Current Assignee Address: US IL Aurora
- Agent Thomas Omholt; Erika Wilson; Francis J. Koszyk
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461 ; B24B37/04 ; C09G1/02

Abstract:
The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition.
Public/Granted literature
- US20170066102A1 SELECTIVE NITRIDE SLURRIES WITH IMPROVED STABILITY AND IMPROVED POLISHING CHARACTERISTICS Public/Granted day:2017-03-09
Information query
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