The present disclosure provides for methods of depositing a dielectric layer within a reaction chamber including a first electrode configured to support a substrate and a second electrode disposed above the first electrode and the substrate. A method includes flowing at least one reactant gas and at least one dilution gas into the reaction chamber, applying a first maximum low frequency radio frequency (LFRF) reflective power between the first and second electrodes to deposit a dielectric layer on the substrate, and applying a second maximum LFRF reflective power between the first and second electrodes during a termination operation, wherein the second maximum LFRF reflective power is less than the first maximum LFRF reflective power.