Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14870379Application Date: 2015-09-30
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Publication No.: US09599644B2Publication Date: 2017-03-21
- Inventor: Tomoya Katsuki
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2014-207167 20141008
- Main IPC: G01R19/165
- IPC: G01R19/165 ; H02J1/00 ; G01R19/00 ; G06F1/28

Abstract:
A semiconductor device operates with electric power supplied from a direct-current power supply to an internal circuit in a state where a bypass capacitor is connected to a power supply terminal. The semiconductor device includes a load current control unit and a detection unit. The load current control unit changes an electric current supplied from the power supply terminal only in a predetermined operation period. The detection unit detects a voltage of the power supply terminal. The detection unit outputs a detection signal when the voltage is higher than a threshold upper limit in a case of being provided with the threshold upper limit. Alternatively, the detection unit outputs a detection signal when the voltage is lower than a threshold lower limit in a case of being provided with the threshold lower limit.
Public/Granted literature
- US20160103159A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-04-14
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