Invention Grant
- Patent Title: Low overdrive probes with high overdrive substrate
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Application No.: US13899458Application Date: 2013-05-21
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Publication No.: US09599665B2Publication Date: 2017-03-21
- Inventor: Ting Hu , Lakshmikanth Namburi
- Applicant: Advantest Corporation
- Applicant Address: JP Tokyo
- Assignee: ADVANTEST CORPORATION
- Current Assignee: ADVANTEST CORPORATION
- Current Assignee Address: JP Tokyo
- Main IPC: G01R31/20
- IPC: G01R31/20 ; G01R31/28

Abstract:
A method for testing a semiconductor device is disclosed. The method comprises positioning a probe card comprising a plurality of probes above the semiconductor device and moving the probe card in a vertical direction towards the semiconductor device. The plurality of probes are moving in a vertical direction towards a plurality of electrical structures of the semiconductor device until each probe of the plurality of probes has made mechanical contact with a corresponding electrical structure of the plurality of electrical structures with a minimum quantity of force. The each probe of the plurality of probes absorbs a portion of vertical overdrive after contacting their corresponding electrical structures. The probe card absorbs any remaining vertical overdrive. The vertical overdrive is a continuing vertical movement of the plurality of probes after a first probe of the plurality of probes mechanically contacts a first corresponding electrical structure.
Public/Granted literature
- US20140347084A1 LOW OVERDRIVE PROBES WITH HIGH OVERDRIVE SUBSTRATE Public/Granted day:2014-11-27
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