Invention Grant
- Patent Title: Magnetoelectric device, method for forming a magnetoelectric device, and writing method for a magnetoelectric device
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Application No.: US14632442Application Date: 2015-02-26
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Publication No.: US09601174B2Publication Date: 2017-03-21
- Inventor: Michael Tran , Cheow Hin Sim , Guchang Han
- Applicant: Agency for Science, Technology and Research
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Crockett & Crockett, PC
- Agent K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- Priority: SG10201400395Q 20140305
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
A magnetoelectric device is provided. The magnetoelectric device includes a reference magnetic layer structure having a fixed magnetization orientation, and a synthetic antiferromagnetic layer structure including a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoelectric device and a writing method for a magnetoelectric device are also provided.
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