A semiconductor memory device includes a first stack of memory cells above a substrate, the first stack including a first memory cell and a second memory cell above the first memory cell, a second stack of memory cells above the substrate, the second stack including a third memory cell, a word line connected to the first, second, and third memory cells, and a controller configured to output data stored in the first memory cell and data stored in the third memory cell during a first cycle, and output data stored in the second memory cell during a second cycle that is different from the first cycle.