Invention Grant
- Patent Title: Pattern forming method and manufacturing method of semiconductor device
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Application No.: US14919919Application Date: 2015-10-22
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Publication No.: US09601331B2Publication Date: 2017-03-21
- Inventor: Tomoyuki Takeishi , Hirokazu Kato , Shinichi Ito
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2004-008290 20040115
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/027 ; G03F7/11 ; H01L21/02 ; H01L21/67 ; G03F7/20 ; G03F7/32 ; G03F7/16 ; H01L21/033 ; H01L21/311
Abstract:
A pattern forming method includes forming a spin on dielectric film on a substrate, washing the spin on dielectric film by using a washing liquid, drying a surface of the spin on dielectric film after the washing, forming a photosensitive film on the dried coating type insulation film, emitting energy rays to a predetermined position of the photosensitive film in order to form a latent image on the photosensitive film, developing the photosensitive film in order to form a photosensitive film pattern which corresponds to the latent image, and processing the spin on dielectric film with the photosensitive film pattern serving as a mask.
Public/Granted literature
- US20160042942A1 PATTERN FORMING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-02-11
Information query
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