Invention Grant
- Patent Title: FinFETs with strained well regions
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Application No.: US14846020Application Date: 2015-09-04
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Publication No.: US09601342B2Publication Date: 2017-03-21
- Inventor: Yi-Jing Lee , Chi-Wen Liu , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/161 ; H01L27/088 ; H01L29/165 ; H01L21/8234 ; H01L29/778 ; H01L29/06 ; H01L29/10 ; H01L21/02 ; H01L21/3105 ; H01L29/43
Abstract:
A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having a first conduction band. A second semiconductor region is over and adjoining the first semiconductor region, wherein the second semiconductor region includes an upper portion higher than top surfaces of the insulation regions to form a semiconductor fin. The second semiconductor region also includes a wide portion and a narrow portion over the wide portion, wherein the narrow portion is narrower than the wide portion. The semiconductor fin has a tensile strain and has a second conduction band lower than the first conduction band. A third semiconductor region is over and adjoining a top surface and sidewalls of the semiconductor fin, wherein the third semiconductor region has a third conduction band higher than the second conduction band.
Public/Granted literature
- US20150380528A1 FinFETs with Strained Well Regions Public/Granted day:2015-12-31
Information query
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