Invention Grant
- Patent Title: Method of localized annealing of semi-conducting elements using a reflective area
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Application No.: US14859427Application Date: 2015-09-21
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Publication No.: US09601352B2Publication Date: 2017-03-21
- Inventor: Issam Ouerghi , Thomas Ernst , Laurent Grenouillet
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1459285 20140930
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/324 ; H01L31/054 ; H01L23/552 ; H01L31/18 ; H01L21/02 ; H01L27/12 ; H01L21/762 ; H01L21/265
Abstract:
A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further provided with one or more components and with a reflective protective area configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a laser radiation emitting in the given wavelength range so as to recrystallize the elements, the reflective protective area being arranged on the support relative to the elements and to the components so as to reflect the laser radiation and protect the components from this radiation.
Public/Granted literature
- US20160093507A1 METHOD OF LOCALIZED ANNEALING OF SEMI-CONDUCTING ELEMENTS USING A REFLECTIVE AREA Public/Granted day:2016-03-31
Information query
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