Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14423513Application Date: 2012-10-25
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Publication No.: US09601408B2Publication Date: 2017-03-21
- Inventor: Shoji Saito , Khalid Hassan Hussein , Arata Iizuka
- Applicant: Shoji Saito , Khalid Hassan Hussein , Arata Iizuka
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2012/077626 WO 20121025
- International Announcement: WO2014/064806 WO 20140501
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/433 ; H01L23/36 ; H01L23/29 ; H01L23/31 ; H01L23/12 ; H01L23/552 ; H01L23/28 ; H01L23/495

Abstract:
A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin.
Public/Granted literature
- US20150340325A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-11-26
Information query
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