Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15003109Application Date: 2016-01-21
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Publication No.: US09601483B2Publication Date: 2017-03-21
- Inventor: Kentaro Ikeda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2015-014820 20150128
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H01L27/06 ; H01L49/02 ; H01L29/868 ; H01L29/872 ; H02M3/155

Abstract:
A semiconductor device according to an embodiment includes a normally-off transistor having a first drain, a first source electrically connected to a source terminal, and a first gate electrically connected to a gate terminal, a normally-on transistor having a second gate, a second source electrically connected to the first drain, and a second drain electrically connected to a voltage terminal, a first capacitor provided between the gate terminal and the second gate, a first diode having a first anode electrically connected to the first capacitor and the second gate, and a first cathode electrically connected to the first source, a coil component provided between the voltage terminal and the second drain, and a second diode having a second anode electrically connected to the first drain and the second source, and a second cathode electrically connected to the coil component and the voltage terminal.
Public/Granted literature
- US20160218100A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-07-28
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