Invention Grant
- Patent Title: Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same
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Application No.: US14109159Application Date: 2013-12-17
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Publication No.: US09601496B2Publication Date: 2017-03-21
- Inventor: Sanghoon Lee , Hyunyong Go , Sunggil Kim , Kyong-Won An , Woosung Lee , Yongseok Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonngi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonngi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0000285 20130102
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/108 ; H01L29/66 ; H01L29/792 ; H01L27/115
Abstract:
In a method of fabricating a semiconductor device, sacrificial layer patterns are formed by leaving portions of sacrificial layers, instead of completely removing the sacrificial layers. Thus, the reliability of the semiconductor device may be increased, and the process of manufacturing the same may be simplified.
Public/Granted literature
- US20140183749A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-07-03
Information query
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