Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14493446Application Date: 2014-09-23
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Publication No.: US09601504B2Publication Date: 2017-03-21
- Inventor: Hyun Ho Lee , Ji Hye Shin
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2014-0079896 20140627
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/115
Abstract:
A semiconductor device according to an embodiment of the invention includes a pipe channel layer including a first portion and a second portion protruding from the first portion, first channel pillars protruding from the second portion of the pipe channel layer, and second channel pillars protruding from the first portion of the pipe channel layer.
Public/Granted literature
- US20150380429A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-12-31
Information query
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