Invention Grant
- Patent Title: Image sensors with photoelectric films
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Application No.: US13860157Application Date: 2013-04-10
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Publication No.: US09601538B2Publication Date: 2017-03-21
- Inventor: Gennadiy Agranov , Jaroslav Hynecek
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Treyz Law Group, P.C.
- Agent Kendall W. Abbasi; Joseph F. Guihan
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/146 ; H01L27/30

Abstract:
An image sensor with an organic photoelectric film for converting light into charge may be provided. The image sensor may include an array of image sensor pixels. Each image sensor pixel may include a charge-integrating pinned diode that collects photo-generated charge from the photoelectric film during an integration period. An anode electrode may be coupled to an n+ doped charge injection region in the charge-integrating pinned diode and may be used to convey the photo-generated charge from the photoelectric film to the charge-integrating pinned diode. Upon completion of a charge integration cycle, a first transfer transistor gate may be pulsed to move the charge from the charge-integrating pinned diode to a charge-storage pinned diode. The charge may be transferred from the charge-storage pinned diode to a floating diffusion node for readout by pulsing a gate of a second charge transfer transistor.
Public/Granted literature
- US20130292548A1 IMAGE SENSORS WITH PHOTOELECTRIC FILMS Public/Granted day:2013-11-07
Information query
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