A method for producing a semiconductor device includes preparing a wafer having plural portions and having an insulator having plural openings thereon, forming an embedding member in each of the plural openings and on the insulator, removing at least a part of the embedding member, and planarizing the embedding member. The plural portions have a first portion and a second portion and each of the first portion and the second portion has a first region and a second region. The density of the openings in the first region is higher than that in the second region. The process of removing at least a part of the embedding member includes removing the embedding member positioned in the second region of the first portion, and removing the embedding member positioned in the second region of the second portion. A first removal amount and a second removal amount in the processes are different.