Invention Grant
- Patent Title: Semiconductor device including STI structure
-
Application No.: US15052957Application Date: 2016-02-25
-
Publication No.: US09601568B2Publication Date: 2017-03-21
- Inventor: Meng Zhao
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201310113662 20130402
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/762 ; H01L29/06 ; H01L29/04 ; H01L29/167 ; H01L29/78
Abstract:
Semiconductor devices including STI structures and their fabrication methods are provided. A mask layer is provided on a semiconductor substrate and patterned to form an opening in the mask layer to expose a surface portion of the semiconductor substrate. A trench is then formed in the semiconductor substrate by etching along the opening. A first dielectric layer is formed in the trench and has a top surface lower than a top surface of the semiconductor substrate to provide an uncovered sidewall surface of the trench in the semiconductor substrate. An epitaxial layer is formed on the uncovered sidewall surface of the trench in the semiconductor substrate. The epitaxial layer includes a spacing to expose a surface portion of the first dielectric layer. A second dielectric layer is formed on the exposed surface portion of the first dielectric layer to fill the spacing formed in the epitaxial layer.
Public/Granted literature
- US20160172440A1 SEMICONDUCTOR DEVICE INCLUDING STI STRUCTURE Public/Granted day:2016-06-16
Information query
IPC分类:
