Invention Grant
- Patent Title: Hetero-integration of III-N material on silicon
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Application No.: US14796730Application Date: 2015-07-10
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Publication No.: US09601583B2Publication Date: 2017-03-21
- Inventor: Can Bayram , Christopher P. D'Emic , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: ARMONK BUSINESS MACHINES CORPORATION
- Current Assignee: ARMONK BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L27/15 ; H01L29/66 ; H01L21/70 ; H01L29/20 ; H01L29/04 ; H01L29/06 ; H01L21/302 ; H01L21/02
Abstract:
A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers.
Public/Granted literature
- US20160020283A1 HETERO-INTEGRATION OF III-N MATERIAL ON SILICON Public/Granted day:2016-01-21
Information query
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