- Patent Title: Gate pullback at ends of high-voltage vertical transistor structure
-
Application No.: US13541965Application Date: 2012-07-05
-
Publication No.: US09601613B2Publication Date: 2017-03-21
- Inventor: Vijay Parthasarathy , Martin H. Manley
- Applicant: Vijay Parthasarathy , Martin H. Manley
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Law Offices of Bradley J. Bereznak
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L29/40 ; H01L21/77 ; H01L29/08 ; H01L29/417

Abstract:
In one embodiment, a transistor includes a pillar of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that extends in a first lateral direction and rounded sections at each end of the substantially linear section. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. First and second gate members respectively disposed in the first and second dielectric regions are separated from the pillar by a gate oxide having a first thickness in the substantially linear section. The gate oxide being substantially thicker at the rounded sections. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
Public/Granted literature
- US20120280314A1 Gate Pullback at Ends of High-Voltage Vertical Transistor Structure Public/Granted day:2012-11-08
Information query
IPC分类: