Invention Grant
- Patent Title: Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells
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Application No.: US14625314Application Date: 2015-02-18
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Publication No.: US09601652B2Publication Date: 2017-03-21
- Inventor: Tansen Varghese , Arthur Cornfeld
- Applicant: SolAero Technologies Corp.
- Applicant Address: US NM Albuquerque
- Assignee: SolAero Technologies Corp.
- Current Assignee: SolAero Technologies Corp.
- Current Assignee Address: US NM Albuquerque
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0224 ; H01L31/0687 ; H01L31/0725 ; H01L31/0735 ; H01L31/078 ; H01L31/02

Abstract:
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10−4 ohms-cm2.
Public/Granted literature
- US20150162485A1 OHMIC N-CONTACT FORMED AT LOW TEMPERATURE IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS Public/Granted day:2015-06-11
Information query
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