Embodiments relate to electrostatic discharge (ESD) protection. One embodiment includes a tie-off circuit including a multiple field effect transistors (FETs), a first internal node, a second internal node, a first output node and a second output node. A node isolation circuit is connected to the first output node and the second output node of the tie-off circuit. The node isolation circuit includes a first FET with a third output node and a second FET with a fourth output node. The third output node and the fourth output node are electrically isolated from the first internal node and the second internal node.