Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US14847981Application Date: 2015-09-08
-
Publication No.: US09602065B2Publication Date: 2017-03-21
- Inventor: Masakazu Mizokami
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-183302 20140909
- Main IPC: H04M1/00
- IPC: H04M1/00 ; H03F3/19 ; H03F1/56 ; H03F3/21 ; H03F3/45 ; H03F3/72

Abstract:
In a semiconductor device, received signals of different frequency bands are input selectively to low noise amplifiers. A plurality of primary inductors are coupled between differential output nodes of the respective low noise amplifiers. A secondary inductor is provided commonly for the primary inductors, and magnetically coupled to the primary inductors. A demodulator converts a received signal transmitted from one of the primary inductors to the secondary inductor by electromagnetic induction, into a signal of a low frequency.
Public/Granted literature
- US20160072443A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-10
Information query