Invention Grant
- Patent Title: Semiconductor device and measurement method
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Application No.: US14222114Application Date: 2014-03-21
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Publication No.: US09606007B2Publication Date: 2017-03-28
- Inventor: Yosuke Iwasa
- Applicant: LAPIS SEMICONDUCTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee: LAPIS Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Studebaker & Brackett PC
- Priority: JP2013-062609 20130325
- Main IPC: G01K7/20
- IPC: G01K7/20 ; G01R23/00

Abstract:
The present invention provides a semiconductor device and a measurement method that enables high precision measurement of temperature or humidity or the like over a wide range. A semiconductor device of the present invention determines which is faster out of a reference oscillation and a thermistor oscillation, and using the faster oscillation as a reference, measures a count value based on the other oscillation. Moreover, the count based on the faster oscillation is employed as a reference value, and a count value based on the other oscillation when the reference value is taken as a measurement value. A frequency ratio is computed based on the reference value and the measurement value, and based on the computed frequency ratio, a table expressing correspondence relationships between frequency ratio and temperature is referred to and a temperature acquired.
Public/Granted literature
- US20140286472A1 SEMICONDUCTOR DEVICE AND MEASUREMENT METHOD Public/Granted day:2014-09-25
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