Invention Grant
- Patent Title: Memory array with strap cells
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Application No.: US14813185Application Date: 2015-07-30
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Publication No.: US09607685B2Publication Date: 2017-03-28
- Inventor: Jhon Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G11C5/02
- IPC: G11C5/02 ; G11C11/419

Abstract:
A memory array comprises a plurality of memory cells arranged in columns and rows. The memory array also comprises a plurality of first-type strap cells arranged in a row, wherein each first-type strap cell comprises a first-type well strap structure. The memory array further comprises a plurality of second-type strap cells arranged in a row. Each second-type strap cell comprises a second-type well strap structure. Each column of memory cells is bracketed by at least one first-type strap cell of the plurality of first-type strap cells or at least one second-type strap cell of the plurality of second-type strap cells.
Public/Granted literature
- US20170032835A1 MEMORY ARRAY WITH STRAP CELLS Public/Granted day:2017-02-02
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