Invention Grant
- Patent Title: Semiconductor device including h-BN insulating layer and its manufacturing method
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Application No.: US14958644Application Date: 2015-12-03
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Publication No.: US09607824B2Publication Date: 2017-03-28
- Inventor: Kazufumi Tanaka
- Applicant: STANLEY ELECTRIC CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee: STANLEY ELECTRIC CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2014-245825 20141204
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/3105 ; H01L33/08 ; H01L33/62 ; H01L33/20
Abstract:
A semiconductor device includes a support substrate, an insulating layer provided on the support substrate, and a semiconductor element provided on the insulating layer. The insulating layer has a lower insulating layer consisting of amorphous boron nitride, and an upper insulating layer provided on the lower insulating layer and including amorphous boron nitride and an hexagonal system boron nitride (h-BN) particles.
Public/Granted literature
- US20160163537A1 SEMICONDUCTOR DEVICE INCLUDING h-BN INSULATING LAYER AND ITS MANUFACTURING METHOD Public/Granted day:2016-06-09
Information query
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