Invention Grant
- Patent Title: Etch process with pre-etch transient conditioning
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Application No.: US15016123Application Date: 2016-02-04
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Publication No.: US09607848B2Publication Date: 2017-03-28
- Inventor: Wonchul Lee , Qian Fu , John S. Drewery
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/467 ; H01J37/32 ; H01L21/3213
Abstract:
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.
Public/Granted literature
- US20160155645A1 ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING Public/Granted day:2016-06-02
Information query
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