Invention Grant
- Patent Title: Substrate structure, semiconductor device, and method for manufacturing the same
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Application No.: US13376731Application Date: 2011-03-04
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Publication No.: US09607877B2Publication Date: 2017-03-28
- Inventor: Huicai Zhong , Qingqing Liang
- Applicant: Huicai Zhong , Qingqing Liang
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Troutman Sanders LLP
- Priority: CN201010520798 20101021
- International Application: PCT/CN2011/071224 WO 20110304
- International Announcement: WO2012/051820 WO 20120426
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L27/12 ; H05K7/20 ; H01L21/762 ; H01L27/06 ; H01L27/088
Abstract:
The present invention provides a substrate structure, a semiconductor device, and a manufacturing method thereof. The substrate structure comprises: a semiconductor substrate; and a first isolation region, wherein the first isolation region comprises: a first trench extending through the semiconductor substrate; and a first dielectric layer filling the first trench. Due to the isolation region extending through the substrate, it is possible to make device structures on both surfaces of the substrate, so as to increase the utilization of the substrate and the integration degree of the devices.
Public/Granted literature
- US20120261790A1 SUBSTRATE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-10-18
Information query
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